Datasheet Details
| Part number | AOB780A70L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 422.42 KB |
| Description | N-Channel Power Transistor |
| Download | AOB780A70L Download (PDF) |
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| Part number | AOB780A70L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 422.42 KB |
| Description | N-Channel Power Transistor |
| Download | AOB780A70L Download (PDF) |
|
|
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Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PFC and PWM stages (Flyback, LLC) of Adapter, PC Silverbox,Server,Gaming Power Supply,Industrial, TV,Lighting 100% UIS Tested 100% Rg Tested TO-220 TO-220F TO-263 D2PAK D 800V 28A < 0.78Ω 11.5nC 1.4mJ D AOT780A70L S GD AOTF780A70L GD S S G AOB780A70L G S Orderable Part Number AOTF780A70L AOT780A70L AOB780A70L Package Type TO220F TO220 TO263 Form Tube Tube Tape&Reel Minimum Order Quantity 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)780A70L AOTF780A70L Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±20 Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt ±30 7 7* 4.5 4.5* 28 1.7 1.5 11 100 20 TC=25°C Power Dissipation B Derate above 25°C PD 89 0.7 25 0.2 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
AOT(B)780A70L 65 0.5 1.4 AOTF780A70L 65 -5.0 Units °C/W °C/W °C/W Rev.1.1: June 2024 www.aosmd.com Page 1 of 6 AOTF780A70L/AOT780A70L/AOB780A70L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETER
AOTF780A70L/AOT780A70L/AOB780A70L 700V, aMOS5 TM N-Channel Power Transistor.
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