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AOB9N70 Datasheet 9A N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

General Description

The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 800V@150℃ 9A < 1.2W Top View TO-220 TO-220F TO-263 D D2PAK D AOT9N70 S D G AOTF9N70 GDS S G AOB9N70 G S Orderable Part Number AOT9N70 AOTF9N70 AOTF9N70L AOB9N70L Package Type TO-220 Pb Free TO-220F Pb Free TO-220F Green TO-263 Green Form Tube Tube Tube Tape & Reel Minimum Order Quantity 1000 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)9N70 Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt 9 ID 5.8 IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD 236 1.8 Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT(B)9N70 65 0.5 Maximum Junction-to-Case RqJC 0.53 * Drain current limited by maximum junction temperature.

Overview

AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General.