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AOC2422 Datasheet 8V N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

General Description

The AOC2422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating.

Product Summary VDS ID (at VGS=2.5V) RDS(ON) (at VGS=2.5V) RDS(ON) (at VGS=1.8V) RDS(ON) (at VGS=1.5V) RDS(ON) (at VGS=1.2V) Typical ESD protection 8V 3.5A < 33mΩ < 38mΩ < 43mΩ < 58mΩ HBM Class 2 AlphaDFN 0.97x0.97A_4 Top View Bottom View Top View Bottom View 3 2 S S G Pin1(G) D 4 G 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 Source Current (Pulse) Note2 Power Dissipation Note1 VGS TA=25°C ID IDM TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 8 ±5 3.5 35 0.6 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 110 160 Note 1.

Mounted on minimum pad PCB Note 2.

Overview

AOC2422 8V N-Channel MOSFET General.