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AOC2412 - 20V N-Channel MOSFET

General Description

The AOC2412 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 8V VGS(MAX) rating.

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AOC2412 20V N-Channel MOSFET General Description The AOC2412 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 8V VGS(MAX) rating. Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) RDS(ON) (at VGS=1.8V) Typical ESD protection 20V 4.5A < 23mΩ < 26mΩ < 30mΩ HBM Class 3A MCSP 1.57x1.57_4 Top View Bottom View Top View Pin1(G) Bottom View 32 DD S 4 G 1 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 Source Current (Pulse) Note2 Power Dissipation Note1 TA=25°C TA=25°C VGS ID IDM PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 4.5 65 0.