Datasheet Details
| Part number | AOC2413 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 256.85 KB |
| Description | 8V P-Channel MOSFET |
| Datasheet | AOC2413-AlphaOmegaSemiconductors.pdf |
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Overview: AOC2413 8V P-Channel MOSFET General.
| Part number | AOC2413 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 256.85 KB |
| Description | 8V P-Channel MOSFET |
| Datasheet | AOC2413-AlphaOmegaSemiconductors.pdf |
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The AOC2413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.2V while retaining a 5V VGS(MAX) rating.
Product Summary VDS ID (at VGS=-2.5V) RDS(ON) (at VGS=-2.5V) RDS(ON) (at VGS=-1.8V) RDS(ON) (at VGS=-1.5V) RDS(ON) (at VGS=-1.2V) Typical ESD protection -8V -3.5A < 28mΩ < 32mΩ < 37mΩ < 47mΩ HBM Class 3A AlphaDFN 1.57x1.57_4 Top View Bottom View Top View Bottom View 3 2 D D Pin1(G) S 4 G G 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 Source Current (Pulse) Note2 Power Dissipation Note1 VGS TA=25°C ID IDM TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -8 ±5 -3.5 -50 0.55 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 140 190 Note 1.
Mounted on minimum pad PCB Note 2.
| Part Number | Description |
|---|---|
| AOC2411 | 30V P-Channel MOSFET |
| AOC2412 | 20V N-Channel MOSFET |
| AOC2414 | 8V N-Channel MOSFET |
| AOC2415 | 20V P-Channel MOSFET |
| AOC2417 | 20V P-Channel MOSFET |
| AOC2401 | 30V P-Channel MOSFET |
| AOC2421 | 8V P-Channel MOSFET |
| AOC2422 | 8V N-Channel MOSFET |
| AOC2423 | 20V P-Channel MOSFET |
| AOC2800 | Common-Drain Dual N-Channel MOSFET |