Datasheet Details
| Part number | AOC2411 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 197.66 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOC2411-AlphaOmegaSemiconductors.pdf |
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Overview: AOC2411 30V P-Channel MOSFET General.
| Part number | AOC2411 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 197.66 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOC2411-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOC2411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.
Vds ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) -30V -3.4A < 45mΩ < 60mΩ WLCSP 1.6x1.6_4 Bottom View 3 D 2 D Top View Equivalent Circuit D SG Pin1(G) 41 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 Source Current (Pulse) Note2 TA=25°C VGS ID ISM Power Dissipation Note1 TA=25°C Junction and Storage Temperature Range PD TJ, TSTG Maximum -30 ±12 -3.4 -52 0.8 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient Note1 Maximum Junction-to-Ambient Note1 Maximum Junction-to-Foot(Drain) t ≤ 5s Steady-State Steady-State Symbol RθJA RθJF Typ 75 130 16 Max 90 155 20 Note 1.
Mounted on minimum pad PCB Note 2.
| Part Number | Description |
|---|---|
| AOC2412 | 20V N-Channel MOSFET |
| AOC2413 | 8V P-Channel MOSFET |
| AOC2414 | 8V N-Channel MOSFET |
| AOC2415 | 20V P-Channel MOSFET |
| AOC2417 | 20V P-Channel MOSFET |
| AOC2401 | 30V P-Channel MOSFET |
| AOC2421 | 8V P-Channel MOSFET |
| AOC2422 | 8V N-Channel MOSFET |
| AOC2423 | 20V P-Channel MOSFET |
| AOC2800 | Common-Drain Dual N-Channel MOSFET |