Datasheet4U Logo Datasheet4U.com

AOC2804 - 20V Common-Drain Dual N-Channel MOSFET

General Description

Product Summary Trench Power AlphaMOS (αMOS LV) technology Low RSS(ON) With ESD protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and Halogen-Free Compliant Applications VSS IS (at VGS=4.5V)

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AOC2804 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary • Trench Power AlphaMOS (αMOS LV) technology • Low RSS(ON) • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications VSS IS (at VGS=4.5V) RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.7V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection • Battery protection switch • Mobile device battery charging and discharging 20V 4A < 22mΩ < 24mΩ < 25mΩ < 29mΩ < 36mΩ HBM Class 3A AlphaDFN 1.5x1.5_4 Top View Bottom View Top View Pin1 Orderable Part Number AOC2804 Package Type AlphaDFN 1.5x1.