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AOC2870 - 20V Common-Drain Dual N-Channel MOSFET

General Description

Trench Power AlphaMOS (αMOS LV) technology Low RSS(ON) Fully protected AlphaDFN package With ESD protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and Halogen-Free Compliant Applicati

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AOC2870 20V Common-Drain Dual N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RSS(ON) • Fully protected AlphaDFN package • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.7V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 20V < 11.9mΩ < 12.5mΩ < 14mΩ < 15.5mΩ < 20mΩ HBM Class 3A AlphaDFN 1.7x1.7_4 Top View Bottom View Top View Pin1 D1 D2 Bottom View 1 S1 2 G1 G1 G2 S2 G2 4 3 S1 S2 Orderable Part Number AOC2870 Package Type AlphaDFN 1.7x1.