Datasheet Details
| Part number | AOD2922 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 362.07 KB |
| Description | 100V N-Channel AlphaMOS |
| Datasheet | AOD2922-AlphaOmegaSemiconductors.pdf |
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Overview: AOD2922 100V N-Channel AlphaMOS General.
| Part number | AOD2922 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 362.07 KB |
| Description | 100V N-Channel AlphaMOS |
| Datasheet | AOD2922-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS MV) technology • Very Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 7A < 140mΩ < 176mΩ Application • Synchronus Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested TO-252 DPAK Top View Bottom View D D D S G G S Orderable Part Number AOD2922 Package Type TO-252 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10us TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 20 40 Maximum Junction-to-Case Steady-State RqJC 7.3 G Form Tape & Reel S Minimum Order Quantity 2500 Maximum 100 ±20 7 5 10 3.5 3 3 0.5 120 17 8.5 5.0 3.2 -55 to 175 Units V V A A A mJ V W W °C Max Units 25 °C/W 50 °C/W 8.8 °C/W Rev.1.1: September 2023 www.aosmd.com Page 1 of 6 AOD2922 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.7 VGS=10V, ID=5A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=3A gFS Forward Transconductance VDS=5V, ID=5A VSD Di
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD2922 | N-Channel MOSFET | INCHANGE |
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AOD2922 | N-Channel 100V MOSFET | VBsemi |
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