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AOD446 - N-Channel MOSFET

Datasheet Summary

Description

The AOD446 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOD446 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 75V ID = 10 A (VGS = 20V) RDS(ON) < 130 mΩ (VGS = 20V) @ 5A RDS(ON) < 140 mΩ (VGS = 10V) RDS(ON) < 165 mΩ (VGS = 4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 75 ±25 10 10 20 10 15 20 10 2.1 1.3 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ,.

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Datasheet Details

Part number AOD446
Manufacturer Alpha & Omega Semiconductors
File Size 171.95 KB
Description N-Channel MOSFET
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www.DataSheet4U.com AOD446 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD446 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD446 is Pb-free (meets ROHS & Sony 259 specifications). AOD446L is a Green Product ordering option. AOD446 and AOD446L are electrically identical. TO-252 D-PAK Features VDS (V) = 75V ID = 10 A (VGS = 20V) RDS(ON) < 130 mΩ (VGS = 20V) @ 5A RDS(ON) < 140 mΩ (VGS = 10V) RDS(ON) < 165 mΩ (VGS = 4.
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