Datasheet4U Logo Datasheet4U.com

AOD442 - 60V N-Channel MOSFET

Datasheet Summary

Description

The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge.

Those devices are suitable for use as a load switch or in PWM applications.

📥 Download Datasheet

Datasheet preview – AOD442

Datasheet Details

Part number AOD442
Manufacturer Alpha & Omega Semiconductors
File Size 540.12 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet AOD442 Datasheet
Additional preview pages of the AOD442 datasheet.

📁 Similar Datasheet

  • AOD442 - N-Channel MOSFET (INCHANGE)
  • AOD442 - N-Channel MOSFET (VBsemi)
  • AOD442G - N-Channel MOSFET (INCHANGE)
  • AOD444 - N-Channel MOSFET (INCHANGE)
  • AOD444 - N-Channel MOSFET (VBsemi)
  • AOD4454 - N-Channel MOSFET (INCHANGE)
  • AOD446 - N-Channel MOSFET (INCHANGE)
  • AOD448 - N-Channel MOSFET (VBsemi)
  • AOD400 - N-channel 30V MOSFET (VBsemi)
  • AOD403 - P-Channel MOSFET (VBsemi)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 60V 37A < 20mW < 25mW TO252 DPAK TO-251A Top View Bottom View Top View IPAK Bottom View D D D D S G G S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.
Published: |