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AOD452 - N-Channel MOSFET

Datasheet Summary

Description

The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard product AOD452 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.5 mΩ (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 55 55 100 30 135 50 25 3 2.1 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche e.

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Datasheet Details

Part number AOD452
Manufacturer Alpha & Omega Semiconductors
File Size 128.29 KB
Description N-Channel MOSFET
Datasheet download datasheet AOD452 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com AOD452 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD452 is Pb-free (meets ROHS & Sony 259 specifications). AOD452L is a Green Product ordering option. AOD452 and AOD452L are electrically identical. TO-252 D-PAK Features VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.5 mΩ (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 4.
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