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AOD454 - N-Channel MOSFET

Datasheet Summary

Description

The AOD454 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Top View D TO-252 D-PAK Bottom View

Features

  • VDS (V) = 40V ID = 12 A (VGS = 10V) RDS(ON) < 33 mΩ (VGS = 10V) RDS(ON) < 47 mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! D GS SG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM J.

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Datasheet preview – AOD454

Datasheet Details

Part number AOD454
Manufacturer Alpha & Omega Semiconductors
File Size 200.59 KB
Description N-Channel MOSFET
Datasheet download datasheet AOD454 Datasheet
Additional preview pages of the AOD454 datasheet.

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Full PDF Text Transcription

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AOD454 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. -RoHS Compliant -Halogen Free* Top View D TO-252 D-PAK Bottom View Features VDS (V) = 40V ID = 12 A (VGS = 10V) RDS(ON) < 33 mΩ (VGS = 10V) RDS(ON) < 47 mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! D GS SG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.
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