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AOD454A - 40V N-Channel MOSFET

Datasheet Summary

Description

The AOD454A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.

Features

  • es VDS (V) = 40V ID = 20A (VGS = 10V) RDS(ON) < 30mW (VGS = 10V) RDS(ON) < 40mW (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,H TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR Power Dissipation B TC=25°.

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Datasheet Details

Part number AOD454A
Manufacturer Alpha & Omega Semiconductors
File Size 672.65 KB
Description 40V N-Channel MOSFET
Datasheet download datasheet AOD454A Datasheet
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AOD454A 40V N-Channel MOSFET General Description The AOD454A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Features VDS (V) = 40V ID = 20A (VGS = 10V) RDS(ON) < 30mW (VGS = 10V) RDS(ON) < 40mW (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,H TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy L=0.
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