Datasheet Details
| Part number | AOD558 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 334.71 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOD558-AlphaOmegaSemiconductors.pdf |
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Overview: AOD558 30V N-Channel MOSFET General.
| Part number | AOD558 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 334.71 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOD558-AlphaOmegaSemiconductors.pdf |
|
|
|
• Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 50A < 5.4mΩ < 9.5mΩ Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested TO252 DPAK D TopView Bottom View D DS G DG S G S Orderable Part Number Package Type AOD558 TO-252 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Form Minimum Order Quantity Tape & Reel 2500 Maximum 30 ±20 50 39 163 17 13 40 8 36 50 25 2.5 1.6 -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 16 41 Maximum Junction-to-Case Steady-State RθJC 2.5 Max 20 50 3 Units °C/W °C/W °C/W Rev 1.0: March 2016 www.aosmd.com Page 1 of 6 AOD558 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.6 2 2.4 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 4.3 5.4 5.4 6.8 mΩ VGS=4.5V, ID=20A 7.5 9.5 mΩ gFS Forward Transconductan
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