Datasheet Details
| Part number | AOD5B65N1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 554.74 KB |
| Description | IGBT |
| Datasheet | AOD5B65N1-AlphaOmegaSemiconductors.pdf |
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Overview: AOD5B65N1 650V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode.
| Part number | AOD5B65N1 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 554.74 KB |
| Description | IGBT |
| Datasheet | AOD5B65N1-AlphaOmegaSemiconductors.pdf |
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• Latest Alpha IGBT (α IGBT) technology • 650V breakdown voltage • Very low turn-off switching loss with softness • Fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Very good EMI behavior • Short-circuit ruggedness Product Summary VCE IC (TC=100°C) VCE(sat) (TJ=25°C) 650V 5A 2V Applications • Motor Drives • Home Appliance and Fan Motor Applications • Other Hard Switching Applications TO-252 DPAK C Top View Bottom View C C E G AOD5B65N1 G E G E Orderable Part Number Package Type Form Minimum Order Quantity AOD5B65N1 TO252 Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOD5B65N1 2500 Units Collector-Emitter Voltage V CE 650 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C Current TC=100°C IC 10 A 5 Pulsed Collector Current, Limited by TJmax I CM 15 A Turn off SOA, VCE≤650V, Limited by TJmax I LM 15 A Continuous Diode Forward Current TC=25°C TC=100°C IF 6.6 A 2.6 Diode Pulsed Current, Limited by TJmax I FM 15 A Short circuit withstanding time 1) VGE=15V, VCC≤300V, TJ≤150°C t SC 5 µs Power Dissipation TC=25°C TC=100°C PD 52 21 W Junction and Storage Temperature Range T J , T STG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol AOD5B65N1 Units Maximum Junction-to-Ambient R θ JA 55 Maximum IGBT Junction-to-Case R θ JC 2.4 Maximum Diode Junction-to-Case R θ JC 6.8 1) Allowed number of short circuits: <1000;
time between short circuits: >1s.
°C/W °C/W °C/W Rev.1.0: January 2016 www.aosmd.com Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C V CE(sat) VF V GE(th) I
Compare AOD5B65N1 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
| AOD5B65M1 | IGBT |
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| AOD504 | 25V N-Channel MOSFET |
| AOD508 | 30V N-Channel MOSFET |
| AOD510 | 30V N-Channel MOSFET |
| AOD514 | 30V N-Channel MOSFET |
| AOD516 | 30V N-Channel MOSFET |
| AOD518 | 30V N-Channel MOSFET |