Datasheet Details
| Part number | AOI360A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 667.15 KB |
| Description | 700V N-Channel Power Transistor |
| Datasheet |
 AOI360A70 Datasheet
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| Part number | AOI360A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 667.15 KB |
| Description | 700V N-Channel Power Transistor |
| Datasheet |
AOI360A70 Datasheet
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger,PD Adapter,TV,lighting Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 48A < 0.36Ω 22.5nC 2.8mJ TO-252 DPAK TO-251A IPAK D TopView Bottom View Top View Bottom View D D D DS DG G S AOD360A70 S GD SD G AOI360A70 Orderable Part Number AOD360A70 AOI360A70 Package Type TO252 TO251A Form Tape & Reel Tube G S Minimum Order Quantity 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Maximum 700 ±20 ±30 12 7.6 48 3.4 5.8 50 100 20 138 1.1 Units V V V A A mJ mJ V/ns W W/°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RqJA RqCS RqJC Typical 45 0.7 Maximum 55 0.5 0.9 Units °C/W °C/W °C/W Rev2.1: February 2024 www.aosmd.com Page 1 of 6 AOD360A70/AOI360A70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V,
AOD360A70/AOI360A70 700V, a MOS5 TM N-Channel Power Transistor.
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