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AOI472 - N-Channel MOSFET

Description

The AOI472 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard product AOI472 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • 1.4 VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AOI472 N-Channel Enhancement Mode Field Effect Transistor General Description The AOI472 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOI472 is Pb-free (meets ROHS & Sony 259 specifications). Features 1.4 VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <6.4 mΩ (VGS = 10V) RDS(ON) <9.7 mΩ (VGS = 4.
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