Datasheet Details
| Part number | AOI950A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 446.05 KB |
| Description | N-Channel Power Transistor |
| Download |
 AOI950A70 Download (PDF)
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| Part number | AOI950A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 446.05 KB |
| Description | N-Channel Power Transistor |
| Download |
AOI950A70 Download (PDF)
|
|
|
|
• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger,Adapter,lighting Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 20A < 0.95Ω 9.4nC 1.2mJ TO252 DPAK Top View D Bottom View D D S D S G AOD950A70 GD S G S Orderable Part Number AOD950A70 AOI950A70 TO-251A IPAK Top View D Bottom View D GDS AOI950A70 Package Type TO-252 TO-251A S DG Form Tape & Reel Tube D G S Minimum Order Quantity 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 700 ±20 ±30 5 3.2 20 0.8 0.3 7.5 100 20 56.5 0.45 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD.F Symbol RqJA RqCS RqJC Typical 45 1.6 Maximum 55 0.5 2.2 Units °C/W °C/W °C/W Rev.2.0: August 2020 www.aosmd.com Page 1 of 6 AOD950A70/AOI950A70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Vo
AOD950A70/AOI950A70 700V, a MOS5 TM N-Channel Power Transistor.
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