Datasheet Details
| Part number | AOK031A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 387.63 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOK031A60-AlphaOmegaSemiconductors.pdf |
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Overview: AOK031A60 600V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AOK031A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 387.63 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOK031A60-AlphaOmegaSemiconductors.pdf |
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • PFC and PWM stages (LLC, PSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested Top View TO-247 700V 352A < 0.031Ω 207nC 23.4mJ D S D G AOK031A60 Orderable Part Number AOK031A60 Package Type TO-247 Form Tube G S Minimum Order Quantity 240 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Diode reverse recovery VDS=0 to 400V,IF<=80A,Tj=25°C ID IDM IAR EAR EAS dv/dt dv/dt di/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RqJA RqCS RqJC Maximum 600 ±20 88 55 352 22 240 1825 100 20 1000 595 4.8 -55 to 150 300 Maximum 40 0.5 0.21 Units V V A A mJ mJ V/ns V/ns A/us W W/°C °C °C Units °C/W °C/W °C/W Rev.1.1: July 2025 www.aosmd.com Page 1 of 6 AOK031A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V, TJ=25°C ID=1mA, VGS=0V, TJ=150°C ID=1mA, VGS=0V Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C Gate-Body leakage current VDS=0V, VGS=±
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