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AOK065V120X2 - Silicon Carbide Power MOSFET

Key Features

  • Proprietary αSiC MOSFET technology.
  • Low loss, fast switching speeds with low RG.
  • Optimized drive voltage (VGS = 15 V) for broad driver compatibility.
  • Robust body diode and low Qrr.

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Features • Proprietary αSiC MOSFET technology • Low loss, fast switching speeds with low RG • Optimized drive voltage (VGS = 15 V) for broad driver compatibility • Robust body diode and low Qrr Applications Renewable • EV Charger • Solar Inverters Pin Configuration Industrial • UPS • SMPS • Motor Drives Top View AOK065V120X2 1200 V αSiC Silicon Carbide Power MOSFET Product Summary VDS @ TJ, max IDM RDS(ON), typ Qrr EOSS @ 800 V 100% UIS Tested 1200 V 85 A 65 mΩ 155 nC 30 µJ RoHS Compliant DD Bottom View (2) (3) (2) (1) GG (1) SS (3) Ordering Part Number AOK065V120X2 Package Type TO-247-3L Form Tube Shipping Quantity 30/Tube Absolute Maximum Ratings (TA = 25°C, unless otherwise noted) Symbol VDS VGS, MAX VGS,OP,TRANS VGS,OP ID IDM EAS PD TJ, TSTG TL Parameter Drain-Sour