Datasheet Details
| Part number | AON6224 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 219.41 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AON6224-AlphaOmegaSemiconductors.pdf |
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Overview: AON6224 100V N-Channel MOSFET General.
| Part number | AON6224 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 219.41 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AON6224-AlphaOmegaSemiconductors.pdf |
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested 100V 34A < 12mΩ < 15.5mΩ Top View DFN5X6 Bottom View PIN1 PIN1 Top View 1 8 2 7 3 6 4 5 D G S Orderable Part Number AON6224 Package Type DFN 5x6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Form Tape & Reel Minimum Order Quantity 3000 Maximum 100 ±20 34 31 104 16 13 20 20 120 56.5 22.5 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Typ Max 15 20 40 50 1.8 2.2 Units °C/W °C/W °C/W Rev.1.0: July 2015 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Di
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