Datasheet Details
| Part number | AON6224A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 295.60 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AON6224A-AlphaOmegaSemiconductors.pdf |
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Overview: AON6224A 100V N-Channel AlphaSGT TM General.
| Part number | AON6224A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 295.60 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AON6224A-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logicl Level Driving • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 34A < 11.6mΩ < 15.1mΩ DFN5X6 D Top View Bottom View Top View PIN1 1 2 3 4 PIN1 8 7 6 5 G S Orderable Part Number AON6224A Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 34 31 120 16 13 25 31 56.5 22.5 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 40 Maximum Junction-to-Case Steady-State RθJC 1.8 Max 20 50 2.2 Units °C/W °C/W °C/W Rev.1.0: July 2017 www.aosmd.com Page 1 of 6 AON6224A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G 100 TJ=55°C 1.5 TJ=125
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|---|---|
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