Datasheet Details
| Part number | AON6284A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 432.83 KB |
| Description | 80V N-Channel MOSFET |
| Download | AON6284A Download (PDF) |
|
|
Overview: AON6284A 80V N-Channel AlphaSGT TM General.
| Part number | AON6284A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 432.83 KB |
| Description | 80V N-Channel MOSFET |
| Download | AON6284A Download (PDF) |
|
|
|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Driven • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 80V 48A < 6.5mΩ < 8.5mΩ Applications • Synchronous Rectification for Quick Charger 3.0 • Synchronous Rectification for AC/DC adapter and DC/DC brick power 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 Orderable Part Number AON6284A S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C VDS Spike 10μs ID IDM IDSM IAS EAS VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±20 48 42.5 170 20 16 40 80 96 56 22 5.0 3.2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s 20 Maximum Junction-to-Ambient A D Steady-State RqJA 45 Maximum Junction-to-Case Steady-State RqJC 1.8 Max 25 55 2.2 Units °C/W °C/W °C/W Rev.1.1: September 2023 www.aosmd.com Page 1 of 6 AON6284A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 80 IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0
| Part Number | Description |
|---|---|
| AON6284 | 80V N-Channel MOSFET |
| AON6280 | 80V N-Channel MOSFET |
| AON6282 | 80V N-Channel MOSFET |
| AON6200 | 30V N-Channel MOSFET |
| AON6202 | 30V N-Channel MOSFET |
| AON6204 | 30V N-Channel MOSFET |
| AON6206 | 30V N-Channel MOSFET |
| AON6210 | 30V N-Channel MOSFET |
| AON6220 | MOSFET |
| AON6224 | 100V N-Channel MOSFET |