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AON7522E - 30V N-Channel MOSFET

General Description

Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge ESD protection RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 34A < 4mΩ < 6.8mΩ HBM Class 2 RDS(ON) (at VGS=10V) RDS(ON) (at VGS

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AON7522E 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 34A < 4mΩ < 6.8mΩ HBM Class 2 RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Typical ESD protection Application • DC/DC Converters 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View S S S G 1 2 3 4 Top View D 8 7 6 5 D D D D G Pin 1 S C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage C TC=25° Continuous Drain ID TC=100° C CurrentG Maximum 30 ±20 34 27 136 21 17 35 31 36 31 12 3.