Datasheet Details
| Part number | AON7506 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 546.62 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7506-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AON7506 30V N-Channel MOSFET General.
| Part number | AON7506 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 546.62 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7506-AlphaOmegaSemiconductors.pdf |
|
|
|
• Latest Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial • See Note I 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View Bottom View Pin 1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain CurrentG Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.05mH C VDS Spike 100ns IDSM IAS EAS VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 12 9.4 48 12 10.5 20 10 36 20.5 8 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 30 60 Maximum Junction-to-Case Steady-State RqJC 5 Max 40 75 6 30V 12A < 9.8mW < 15.8 mW D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev1.1: October 2023 www.aosmd.com Page 1 of 6 AON7506 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 1.8 2.3 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=12A 6.2 TJ=125°C 8 9.8 11 13.5 mW VGS=4.5V, ID=10A 10.2 13 15.8 mW gFS Forward Transconductance VDS=5V, ID=12A 45 S VSD Dio
| Part Number | Description |
|---|---|
| AON7502 | 30V N-Channel MOSFET |
| AON7508 | 30V N-Channel MOSFET |
| AON7510 | 30V N-Channel MOSFET |
| AON7514 | N-Channel MOSFET |
| AON7516 | 30V N-Channel MOSFET |
| AON7520 | 30V N-Channel MOSFET |
| AON7522E | 30V N-Channel MOSFET |
| AON7524 | 30V N-Channel MOSFET |
| AON7528 | 30V N-Channel MOSFET |
| AON7532E | 30V N-Channel MOSFET |