Datasheet Details
| Part number | AON7508 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 394.79 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7508-AlphaOmegaSemiconductors.pdf |
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Overview: AON7508 30V N-Channel MOSFET General.
| Part number | AON7508 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 394.79 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7508-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 32A < 3.0mW < 4.6mW DFN 3x3 EP Top View Bottom View Pin 1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 32 25 128 26 21 50 63 36 62.5 25 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 30 60 Maximum Junction-to-Case Steady-State RqJC 1.5 Max 40 75 2 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev 1.0: December 2021 www.aosmd.com Page 1 of 6 AON7508 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current G 30 TJ=55°C 1.2 TJ=125°C V 1 mA 5 ±100 nA
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