Datasheet Details
| Part number | AON7510 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 365.84 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7510-AlphaOmegaSemiconductors.pdf |
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Overview: AON7510 30V N-Channel AlphaMOS General.
| Part number | AON7510 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 365.84 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7510-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 75A < 1.25mΩ < 2.1mΩ RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Application • System/Load Swithch,Battery Swithch 100% UIS Tested 100% Rg Tested DFN 3.3x3.3 Top View Pin 1 1 2 3 4 8 7 6 5 Bottom View Top View D G S Pin 1 Orderable Part Number AON7510 Package Type DFN 3.3x3.3 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Maximum 30 Units V Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy VDS Spike Power Dissipation B Power Dissipation A L=0.05mH 10µs TC=25° C TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C VGS C TC=25° TC=100° C C ±20 75 59 300 45 35.5 60 90 36 46 18.5 4.1 2.6 -55 to 150 V A ID IDM TA=25° C TA=70° C IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG A A mJ V W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 25 50 1.8 Max 30 60 2.7 Units ° C/W ° C/W ° C/W Rev.1.0: November 2013 www.aosmd.com Page 1 of 6 http://www.Datasheet4U.com Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.2 1.6 0.9 1.35 1.65 90 0.65 1 58 4500 VGS=0V, VDS=15V, f=1MHz f=1MHz 0.9 1400 1310 1.8 100 VGS=10V, VDS=15V, ID=20A 60 10 40 10 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 20 58 37 Min 30 Typ
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