Datasheet Details
| Part number | AON7514 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 266.95 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON7514-AlphaOmegaSemiconductors.pdf |
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Overview: AON7514 30V N-Channel AlphaMOS General.
| Part number | AON7514 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 266.95 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON7514-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 30A < 5mΩ < 8.5mΩ DFN 3x3 EP Top View Bottom View Pin 1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain CurrentG TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.05mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 30 23 120 20 16 32 26 36 23 9 3 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 30 60 4.5 Max 40 75 5.4 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev 0: Nov 2011 www.aosmd.com Page 1 of 6 AON7514 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.2 1.8 2.2 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 4.1 5 5.6 6.8 mΩ VGS=4.5V, ID=20A 6.7 8.5 mΩ gFS Forward Transconductance VDS=5V, ID=20A 91 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V IS M
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