Datasheet Details
| Part number | AON7532E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 378.24 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7532E-AlphaOmegaSemiconductors.pdf |
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Overview: AON7532E 30V N-Channel AlphaMOS General.
| Part number | AON7532E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 378.24 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7532E-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 28A < 3.5mΩ < 5.5mΩ HBM Class 2 RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection Application • DC/DC Converters 100% UIS Tested 100% R g Tested Top View DFN 3x3 EP Bottom View Top View 1 2 3 4 D 8 7 6 5 G Pin 1 S C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drai n-Source Voltage rain-Source D VDS DS Gate-Source Voltage VGS C TC=25° Continuous Drain ID C TC=100° CurrentG Maximum 30 ±20 28 21 112 30.5 24 45 51 36 28 11 5 3.2 -55 to 150 Units V V A Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C IDM TA=25° C TA=70° C IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C A A mJ V W W ° C Avalanche energy L=0.05mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 20 45 3.6 Max 25 55 4.4 Units ° C/W ° C/W ° C/W Rev.1.0 August 2013 www.aosmd.com Page 1 of 6 http://www.Datasheet4U.com AON7532E C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=125° C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=16A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.4 1.8 2.9 4.1 4.4 70 0.7 1 28 1950 VGS=0V, VDS=15V, f=1MHz f=1MHz 1.1 810 95 2.3 28 VGS=10V, VDS=15V, ID=20A 12.8 7 4.8 8 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 6 28 Min 30 Typ Max Units V STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS
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