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AON7532E - 30V N-Channel MOSFET

Description

Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(ON) at 4.5V VGS Low Gate Charge ESD protection RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 28A < 3.5mΩ < 5.5mΩ HBM Class 2 RDS(ON) (at VGS=10V) RDS(ON) (at

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AON7532E 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 28A < 3.5mΩ < 5.5mΩ HBM Class 2 RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection Application • DC/DC Converters 100% UIS Tested 100% R g Tested Top View DFN 3x3 EP Bottom View Top View 1 2 3 4 D 8 7 6 5 G Pin 1 S C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drai n-Source Voltage rain-Source D VDS DS Gate-Source Voltage VGS C TC=25° Continuous Drain ID C TC=100° CurrentG Maximum 30 ±20 28 21 112 30.5 24 45 51 36 28 11 5 3.
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