Datasheet Details
| Part number | AON7538 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 395.08 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7538-AlphaOmegaSemiconductors.pdf |
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Overview: AON7538 30V N-Channel AlphaMOS General.
| Part number | AON7538 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 395.08 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7538-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) 30V 30A < 5.1mΩ < 8.2mΩ RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View 1 2 3 4 Top View 8 7 6 5 D G S Pin 1 C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drain-Source Voltage VDS Gate-Source te-Source Voltage VGS GS Maximum 30 ±20 ±20 30 Units V V Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 23 120 23 18 40 8 36 24 9 4.2 2.6 -55 to 150 A A A mJ V W W ° C Avalanche energy L=0.01mH C 100ns TC=25° C TC=100° C C TA=25° TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 24 47 4.2 Max 30 60 5.2 Units ° C/W ° C/W ° C/W Rev.1.0: August 2013 www.aosmd.com Page 1 of 6 http://www.Datasheet4U.com AON7538 C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS，ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.4 1.8 4.2 6 6.5 62 0.7 1 28 1128 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.7 435 59 1.4 16.2 VGS=10V, VDS=15V, ID=20A 7.4 4.3 2.3 5.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 3 22.5 Min 30 Typ Max
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