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AON7516 - 30V N-Channel MOSFET

General Description

Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 30A < 4.5mΩ < 6.8mΩ RDS(ON) (at VGS=10V) RDS(ON) (at VGS

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AON7516 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 30A < 4.5mΩ < 6.8mΩ RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View 1 2 3 4 Top View D 8 7 6 5 G S Pin 1 C unless otherwise noted Absolute Maximum Ratings TA=25° Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS C TC=25° Continuous Drain ID TC=100° C CurrentG Maximum 30 ±20 30 23 80 20 16 34 29 36 25 10 3.