Datasheet Details
| Part number | AON7534 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 307.70 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7534-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AON7534 30V N-Channel MOSFET General.
| Part number | AON7534 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 307.70 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7534-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 30A < 5mW < 8.5mW DFN 3x3 EP Top View Bottom View Pin 1 Top View S1 S2 S3 G4 8D 7D 6D 5D D G S Orderable Part Number AON7534 Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.05mH C VDS Spike 100ns ID IDM IDSM IAS EAS VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 30 23 120 20 16 32 26 36 23 9 3 2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 30 60 Maximum Junction-to-Case Steady-State RqJC 4.5 Max 40 75 5.4 Units °C/W °C/W °C/W Rev.1.1: October 2023 www.aosmd.com Page 1 of 6 AON7534 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS，ID=250mA 1.4 VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode
| Part Number | Description |
|---|---|
| AON7532E | 30V N-Channel MOSFET |
| AON7536 | 30V N-Channel MOSFET |
| AON7538 | 30V N-Channel MOSFET |
| AON7502 | 30V N-Channel MOSFET |
| AON7506 | 30V N-Channel MOSFET |
| AON7508 | 30V N-Channel MOSFET |
| AON7510 | 30V N-Channel MOSFET |
| AON7514 | N-Channel MOSFET |
| AON7516 | 30V N-Channel MOSFET |
| AON7520 | 30V N-Channel MOSFET |