Datasheet Details
| Part number | AOSX21319C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 529.28 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOSX21319C-AlphaOmegaSemiconductors.pdf |
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Overview: AOSX21319C 30V P-Channel MOSFET General.
| Part number | AOSX21319C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 529.28 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOSX21319C-AlphaOmegaSemiconductors.pdf |
|
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|
• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Applications • This device is ideal for Load Switch Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) ESD protection -30V -2.6A < 100mΩ < 150mΩ SC70-6L (SOT-363) D Pin1 Top View Bottom View D 1 6 D Pin1 Orderable Part Number AOSX21319C D G Package Type SC70-6 2 5 D G 3 4 S S Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -2.6 -2.0 -10 1.1 0.7 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 90 110 Maximum Junction-to-Lead Steady-State RqJL 60 Max 110 135 72 Units °C/W °C/W °C/W Rev.1.1: May 2020 www.aosmd.com Page 1 of 5 AOSX21319C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C -1 μA -5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±10 μA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1.2 -1.7 -2.2 V RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-2.6A TJ=125°C 75 100 mΩ 102 145 VGS=-4.5V, ID=-2.1A 107 150 mΩ gFS Forward Transconductance VDS=-5V, ID=-2.6A 8 S VSD Diode Forward Voltage IS=-1A, VGS=0V -0.8 -1 V IS Maximum Body-Diode Continuous Current -1 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resi
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