Datasheet Details
| Part number | AOSX32128 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 370.84 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AOSX32128-AlphaOmegaSemiconductors.pdf |
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Overview: AOSX32128 20V N-Channel MOSFET General.
| Part number | AOSX32128 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 370.84 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AOSX32128-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS 2.0 and Halogen-Free Compliant Applications • This device is ideal for Load Switch Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) RDS(ON) (at VGS=1.8V) Typical ESD protection 100% Rg Tested 20V 3.2A < 75mΩ < 90mΩ < 120mΩ HBM Class 2 SC70-6L (SOT-363) Pin1 D Top View Bottom View Pin1 Orderable Part Number AOSX32128 D 1 6 D D 2 5 D G 3 4 S G S Package Type SC70-3 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 3.2 2.5 13 1.1 0.7 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 90 110 Maximum Junction-to-Lead Steady-State RqJL 60 Max 110 135 72 Units °C/W °C/W °C/W Rev.1.1: February 2022 www.aosmd.com Page 1 of 5 AOSX32128 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 20 IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 0.4 VGS=4.5V, ID=3.2A RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=3A TJ=125°C VGS=1.8V, ID=1A gFS Forward Transconductance VDS=5V, ID=3.2A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=10V, f=1MHz Crss Reverse Transfer Capacitance Rg Gate resistance f=1MHz 4
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