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AOT410L Datasheet 100v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOT410L/AOB410L 100V N-Channel MOSFET SDMOS TM General.

General Description

The AOT410L/AOB410L is fabricated with SDMOSTM trench technology that bines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior.

This universal technology is well suited for PWM, load switching and general purpose applications.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS= 7V) 100% UIS Tested 100% Rg Tested 100V 150A < 6.5mW (< 6.2mW*) < 7.5mW (< 7.2mW*) Top View TO-220 Bottom View Top View TO-263 D2PAK Bottom View D D D D D AOT410L S GD Orderable Part Number AOT410L AOB410L SDG Package Type TO-220 TO-263 S G AOB410L Form Tube Tape & Reel G G S S Minimum Order Quantity 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS,IAR EAS,EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±25 150 108 405 12 10 50 125 333 167 1.9 1.2 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12 54 0.35 Max 15 65 0.45 Units °C/W °C/W °C/W Rev.3.1: May 2024 .aosmd.

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