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AOT412 - N-Channel Power Transistor

General Description

The AOT412 & AOB412L are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior.

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Other Datasheets by Alpha & Omega Semiconductors

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AOT412/AOB412L 100V N-Channel MOSFET SDMOS TM General Description The AOT412 & AOB412L are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 100V 60A < 15.8mΩ < 19.