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AOT412 Datasheet N-channel Power Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AOT412/AOB412L 100V N-Channel MOSFET SDMOS TM General.

General Description

The AOT412 & AOB412L are fabricated with SDMOSTM trench technology that bines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior.

This universal technology is well suited for PWM, load switching and general purpose applications.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 100V 60A < 15.8mΩ < 19.4mΩ Top View D TO220 Bottom View D Top View TO-263 D2PAK Bottom View D D G DS AOT412 S DG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS,IAR EAS,EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissip

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