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AOT500 - N-Channel MOSFET

General Description

AOT500 uses an optimally designed temperature compensated gate-drain zener clamp.

Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

Key Features

  • VDS (V) = Clamped ID = 80A (VGS = 10V) RDS(ON) < 5.3 mΩ (VGS = 10V) General.

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www.datasheet4u.com AOT500 N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = Clamped ID = 80A (VGS = 10V) RDS(ON) < 5.3 mΩ (VGS = 10V) General Description AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET. The built in resistor guarantees proper clamp operation under all circuit conditions, and the MOSFET never goes into avalanche breakdown. Advanced trench technology provides excellent low Rdson, gate charge and body diode characteristics, making this device ideal for motor and inductive load control applications. Standard Product AOT500 is Pb-free (meets ROHS & Sony 259 specifications).