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AOTF12N60 Datasheet 12a N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 12A < 0.55W TO-220 Top View TO-220F D G D S G DS G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT12N60 AOTF12N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 12 12* 9.7 9.7* 48 5.5 450 900 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 278 2.2 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT12N60 65 0.5 AOTF12N60 65 -- Maximum Junction-to-Case RqJC 0.45 2.5 * Drain current limited by maximum junction temperature.

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