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AOTF9606 - 8A N-Channel MOSFET

This page provides the datasheet information for the AOTF9606, a member of the AOT9606 8A N-Channel MOSFET family.

Datasheet Summary

Description

The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Features

  • VDS (V) = 700V @ 150°C ID = 8A RDS(ON) < 0.9 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G G D G S D S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT8N60 Parameter Symbol AOTF8N60 V Drain-Source Voltage 600 DS VGS Gate-Source Voltage ±30 Continuous Drain B Current Pulsed Drain Current Avalanche Current C C Units V V A A mJ mJ V/ns W W/ C °C °C o TC=25°C TC=100°C ID IDM IAR EAR G 8 5 32 3.2 150 300 5 147 1.17 -50.

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Datasheet preview – AOTF9606

Datasheet Details

Part number AOTF9606
Manufacturer Alpha & Omega Semiconductors
File Size 217.02 KB
Description 8A N-Channel MOSFET
Datasheet download datasheet AOTF9606 Datasheet
Additional preview pages of the AOTF9606 datasheet.

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Full PDF Text Transcription

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AOT8N60 www.datasheet4u.com / AOTF8N60 600V, 8A N-Channel MOSFET formerly engineering part number AOT9606/AOTF9606 General Description The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 700V @ 150°C ID = 8A RDS(ON) < 0.
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