Description
The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
Features
- VDS (V) = 700V @ 150°C ID = 12A RDS(ON) < 0.55 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested!
TO-220
Top View
TO-220F
D
G G D G S D S S
Absolute Maximum Ratings TA=25°C unless otherwise noted AOT12N60 Parameter Symbol AOTF12N60 VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 Continuous Drain Current B Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy Peak diode recovery dv/dt TC=25°C B Power Dissipa.
AOTF9610 Datasheet
