Datasheet Details
| Part number | AOTL66518Q |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 323.01 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AOTL66518Q-AlphaOmegaSemiconductors.pdf |
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Overview: AOTL66518Q 150V N-Channel AlphaSGT TM AEC-Q101 Qualified General.
| Part number | AOTL66518Q |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 323.01 KB |
| Description | 150V N-Channel MOSFET |
| Datasheet | AOTL66518Q-AlphaOmegaSemiconductors.pdf |
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• AEC-Q101 Qualified • Trench Power MOSFET - AlphaSGTTM technology • Combined of low RDS(ON) and wide safe operatiing area (SOA) • Higher in-rush current enabled for faster start-up and shorter down time • RoHS 2.0 and Halogen-Free Compliant Applications • Load switch • BMS • Motor Top View TOLLA Bottom View Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 100% UIS Tested 100% Rg Tested Max Tj=175°C D 150V 206A < 4.7mΩ < 5.3mΩ D PIN1(G) S PIN1(G) Orderable Part Number AOTL66518Q Package Type TOLLA Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C (≤100μS) IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS Diode reverse recovery VDS=0 to 75V,IF≤300A,TJ≤125°C di/dt TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC G S Form Minimum Order Quantity Tape & Reel 2000 Maximum 150 ±20 206 145 824 29 24 70 735 500 500 250 10 7 -55 to 175 Units V V A A A mJ A/us W W °C Typ Max 10 15 35 45 0.2 0.3 Units °C/W °C/W °C/W Rev.1.0: February 2025 www.aosmd.com Page 1 of 7 AOTL66518Q Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 150 IDSS Zero Gate Voltage Drain Current VDS=150V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.7 VGS=10V, ID=100A RDS(ON) Static Drain-Source On-Resistance
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