Datasheet Details
| Part number | AOTL66608 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 275.13 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AOTL66608-AlphaOmegaSemiconductors.pdf |
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Overview: AOTL66608 60V N-Channel AlphaSGT TM General.
| Part number | AOTL66608 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 275.13 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet | AOTL66608-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications • Battery Protection • Power Distribution Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested 60V 400A < 0.85mΩ < 1.1mΩ TOLLA D Top View Bottom View D PIN1(G) S PIN1(G) G S Orderable Part Number AOTL66608 Package Type TOLLA Form Minimum Order Quantity Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current Tp=130ms C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 400 400 1300 73.5 58.5 95 1354 500 250 8.3 5.3 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 10 35 Maximum Junction-to-Case Steady-State RqJC 0.2 Max 15 45 0.3 Units °C/W °C/W °C/W Rev.1.1: July 2025 www.aosmd.com Page 1 of 6 AOTL66608 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.1 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capac
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