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AOTS26108 - 30V/20V Complementary MOSFET

General Description

Trench Power MOSFET technology Low RDS(ON) Low Gate Charge RoHS and Halogen-Free Compliant Applications This device is ideal for Load Switch Product Summary N-Channel VDS= 30V ID= 3.8A (VGS=10V) RDS(ON) < 50mΩ (VGS=10V) < 57mΩ (VGS=4.5V) < 72mΩ (VGS

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AOTS26108 30V/20V Complementary MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Applications...

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S(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Applications • This device is ideal for Load Switch Product Summary N-Channel VDS= 30V ID= 3.8A (VGS=10V) RDS(ON) < 50mΩ (VGS=10V) < 57mΩ (VGS=4.5V) < 72mΩ (VGS=2.5V) ESD protection P-Channel -20V -4.5A (VGS=-4.5V) RDS(ON) < 44mΩ (VGS=-4.5V) < 59mΩ (VGS=-2.5V) < 80mΩ (VGS=-1.8V) TSOP6 Top View Bottom View Top View D D G1 1 6 D1 S2 2 5 S1 G G G2 3 4 D2 S Pin1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 30 -20 Gate-Source Voltage VGS ±12 ±8 Continuous Drain Current TA=25°C TA=7