Datasheet Details
| Part number | AOV20S60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 340.08 KB |
| Description | Power Transistor |
| Datasheet |
 AOV20S60 Datasheet
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| Part number | AOV20S60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 340.08 KB |
| Description | Power Transistor |
| Datasheet |
AOV20S60 Datasheet
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Product Summary The AOV20S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 80A 0.25Ω 20nC 4.9µJ Top View DFN8X8 Bottom View D G Pin1:G AOV20S60 S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G IDSM IAR EAR EAS TC=25°C Power Dissipation B Derate above 25oC PD TA=25°C Power Dissipation A TA=70°C MOSFET dv/dt ruggedness Peak diode recovery dv/dt H PDSM dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State TL Symbol RθJA Maximum Junction-to-Case Steady-State RθJC Pin2: Driver Source Maximum 600 ±30 18 13 80 3.6 2.9 3.4 23 188 278 2.2 8.3 5.3 100 20 -55 to 150 Typ 12 40 0.35 300 G Max 15 50 0.45 D S Units V V A A A mJ mJ W W/ oC W V/ns °C °C Units °C/W °C/W °C/W Rev.1.0: September 2013 www.aosmd.com Page 1 of 7 AOV20S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=150°C IGSS Gate-Body leak
AOV20S60 600V 18A α MOS TM Power Transistor General.
| Part Number | Description |
|---|---|
| AOV11S60 | Power Transistor |
| AOV15S60 | Power Transistor |