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AOV11S60 - Power Transistor

Description

The AOV11S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

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AOV11S60 600V 8A α MOS TM Power Transistor General Description Product Summary The AOV11S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 45A 0.5Ω 11nC 2.
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