Datasheet Details
| Part number | AOW160A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 476.30 KB |
| Description | N-Channel Power Transistor |
| Download | AOW160A60 Download (PDF) |
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Overview: AOWF160A60/AOW160A60 600V, a MOS5 TM N-Channel Power Transistor.
Download the AOW160A60 datasheet PDF. This datasheet also includes the AOWF160A60 variant, as both parts are published together in a single manufacturer document.
| Part number | AOW160A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 476.30 KB |
| Description | N-Channel Power Transistor |
| Download | AOW160A60 Download (PDF) |
|
|
|
• Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Micro inverter with DC/AC inverter topology Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-262F Top View Bottom View TO-262 Top View Bottom View 700V 96A < 0.16Ω 46nC 4.9mJ D S GD G D S AOWF160A60 Orderable Part Number AOW160A60 AOWF160A60 Package Type TO262 TO-262F G S D G G SD S AOW160A60 Form Tube Tube Minimum Order Quantity 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOW160A60 AOWF160A60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±20 Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt ±30 24 24* 15 15* 96 6 18 172 100 20 TC=25°C Power Dissipation B Derate above 25°C PD 250 27.7 2 0.22 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
AOW160A60 65 0.5 0.5 AOWF160A60 65 -4.5 Units °C/W °C/W °C/W Rev.3.2: February 2024 www.aosmd.com Page 1 of 6 AOWF160A60/AOW160A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=
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