Datasheet Details
| Part number | AOW360A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 653.86 KB |
| Description | 700V N-Channel Power Transistor |
| Datasheet |
 AOW360A70 Datasheet
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| Part number | AOW360A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 653.86 KB |
| Description | 700V N-Channel Power Transistor |
| Datasheet |
AOW360A70 Datasheet
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • Flyback for SMPS • Charger ,PD Adapter, TV, lighting.
100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View TO-262F Top View Bottom 800V 48A < 0.36Ω 22.5nC 2.8mJ D S D G AOW360A70 Orderable Part Number AOW360A70 AOWF360A70 G SD G DS AOWF360A70 Package Type TO262 TO262F G D S Form Tube Tube G S Minimum Order Quantity 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOW360A70 Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VDS VGS VGS ID IDM IAR EAR EAS dv/dt 700 ±20 ±30 12 7.6 48 3.4 5.8 50 100 20 TC=25°C Power Dissipation B Derate above 25°C PD 156 1.25 AOWF360A70 12* 7.6* 29.5 0.23 Units V V V A A mJ mJ V/ns W W/°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Case-to-sink A RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
AOW360A70 65 0.5 0.8 AOWF360A70 65 --4.2 Units °C/W °C/W °C/W Rev1.1: February 2024 www.aosmd.com Page 1 of 6 AOW360A70/AOWF360A70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdo
AOW360A70/AOWF360A70 700V, a MOS5 TM N-Channel Power Transistor.
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