Datasheet Details
| Part number | AOWF190A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 496.61 KB |
| Description | 600V N-Channel Power Transistor |
| Download | AOWF190A60 Download (PDF) |
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| Part number | AOWF190A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 496.61 KB |
| Description | 600V N-Channel Power Transistor |
| Download | AOWF190A60 Download (PDF) |
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting, Telecom Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-262F Top View Bottom View 700V 80A < 0.19Ω 34nC 4.3mJ D G DS G D S AOWF190A60 Orderable Part Number Package Type AOWF190A60 TO-262F Form Tube G S Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL AOWF190A60 600 ±20 ±30 20* 12* 80 5 12.5 410 100 20 27 0.22 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature AOWF190A60 65 4.5 Units °C/W °C/W Rev.2.0: December 2020 www.aosmd.com Page 1 of 6 AOWF190A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leak
AOWF190A60 600V, a MOS5 TM N-Channel Power Transistor General.
| Part Number | Description |
|---|---|
| AOWF190A60C | N-Channel Power Transistor |
| AOWF10N60 | 10A N-Channel MOSFET |
| AOWF10N65 | 10A N-Channel MOSFET |
| AOWF10T60 | 10A N-Channel MOSFET |
| AOWF11C60 | 11A N-Channel MOSFET |
| AOWF11S60 | Power Transistor |
| AOWF11S65 | Power Transistor |
| AOWF125A60 | N-Channel Power Transistor |
| AOWF12N50 | 12A N-Channel MOSFET |
| AOWF12N60 | 12A N-Channel MOSFET |