Datasheet Details
| Part number | AOWF380A60C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 608.15 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet |
 AOWF380A60C Datasheet
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| Part number | AOWF380A60C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 608.15 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet |
AOWF380A60C Datasheet
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting, Server power 100% UIS Tested 100% Rg Tested TO-262F D Top View Bottom View 700V 44A < 0.38Ω 18nC 2.6mJ G DS AOWF380A60C DG S Orderable Part Number AOWF380A60C Package Type TO262F Form Tube G S Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G (TJ=25°C, VGS=10V, IL=2Apk, L=105mH, RGS=25W) MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt Power Dissipation B TC=25°C Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±20 ±30 11* 7.2* 44 2.5 3.1 210 100 20 25 0.2 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
Maximum 65 5.0 Units °C/W °C/W Rev.2.1: February 2024 www.aosmd.com Page 1 of 6 AOWF380A60C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V
AOWF380A60C 600V a MOS5 TM N-Channel Power Transistor General.
| Part Number | Description |
|---|---|
| AOWF360A70 | 700V N-Channel Power Transistor |
| AOWF095A60 | 600V N-Channel Power Transistor |
| AOWF10N60 | 10A N-Channel MOSFET |
| AOWF10N65 | 10A N-Channel MOSFET |
| AOWF10T60 | 10A N-Channel MOSFET |
| AOWF11C60 | 11A N-Channel MOSFET |
| AOWF11S60 | Power Transistor |
| AOWF11S65 | Power Transistor |
| AOWF125A60 | N-Channel Power Transistor |
| AOWF12N50 | 12A N-Channel MOSFET |